Process for dicing a semiconductor wafer having a plated heat si

Details Process for dicing a semiconductor wafer having a plated heat si Process for dicing a semiconductor wafer having a plated heat si

1994-02-15

1995-10-10

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437902, 437947, H01L 21302

Patent

active

054570727

ABSTRACT:
A method for producing semiconductor chips includes preparing a semiconductor wafer having opposite front and rear surfaces and active semiconductor devices disposed in the semiconductor wafer at a part of the front surface, attaching a glass plate to the front surface of the semiconductor wafer, thinning the semiconductor wafer to a desired thickness from the rear surface, forming a first radiating layer over the rear surface of the semiconductor wafer, selectively forming a second radiating layer on the first radiating layer using, as a mask, a photoresist pattern covering portions of the first radiating layer opposite dicing regions, removing the semiconductor wafer from the glass plate, and cutting through the wafer and the first radiating layer with a dicing blade to produce a plurality of semiconductor chips. In this method, since the first radiating layer supports the thin wafer, the glass plate can be removed before the dicing process. Therefore, electrical testing of the semiconductor devices included in the wafer can be carried out before the wafer is divided into chips.

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Okaniwa et al., "A Novel FET Structure of Buried Plated Heat Sink for Superior High Performance GaAs MMICs", IEEE GaAs IC Symposium, 1990, pp. 233-236.

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