Process for depositing silicon dioxide by liquid phase dipositio

Details Process for depositing silicon dioxide by liquid phase dipositio Process for depositing silicon dioxide by liquid phase dipositio

1995-06-01

1996-04-09

Utech, Benjamin

Coating processes

Immersion or partial immersion

B05D 118

Patent

active

055060064

ABSTRACT:
A process for depositing a silicon dioxide (SiO.sub.2) film on a substrate by liquid phase deposition is developed. Silicic acid is used instead of SiO.sub.2 powder to saturate hydrofluorosilicic acid so as to shorten the period required for preparing the solution to 3 hours. Water is used to supersaturate the solution. The corresponding deposition rate of SiO.sub.2 is about 50 nm per hour.

REFERENCES:
patent: 5073408 (1991-12-01), Goda et al.
patent: 5236874 (1993-08-01), Pintchovski
patent: 5270233 (1993-12-01), Hamatake
patent: 5286664 (1994-02-01), Horiuchi
H. Nagayama et al., "A New Process for Silica Coating,"J. Electrochemical Society 135(8) PP. 2013-2016 1988.
Websters Ninth New Collegiate Dictionary 1986 p. 1097.

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