Process for depositing oxynitride film on substrate by liquid ph

Details Process for depositing oxynitride film on substrate by liquid ph Process for depositing oxynitride film on substrate by liquid ph

1997-03-17

1998-06-16

King, Roy V.

Coating processes

Immersion or partial immersion

Inorganic base

4274301, 4273977, 427377, 438786, B05D 118

Patent

active

057666920

ABSTRACT:
A process for depositing an oxynitride film on a substrate by liquid phase deposition. A nitrogen radical-containing solution is added to a silicon dioxide supersaturated solution to obtain a deposition solution. Then, a substrate is contacted with the deposition solution to deposit the oxynitride film on the substrate, followed by thermal annealing under nitrogen.

REFERENCES:
patent: 5565376 (1996-10-01), Lur et al.
Yeh et al, Appl. Phys. Lett. 66(8), Feb. 1995, pp. 938-940.

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