Process for depositing elemental silicon semiconductor material

Details Process for depositing elemental silicon semiconductor material Process for depositing elemental silicon semiconductor material

1977-03-04

1978-11-14

Smith, John D.

Coating processes

Measuring, testing, or indicating

Thickness or uniformity of thickness determined

427 10, 427 86, 427 95, 423349, 423350, 118 7, 118 9, B05D 512, B01J 1728

Patent

active

041256433

ABSTRACT:
A semiconductor material, such as elemental silicon, is deposited on heated rod-shaped mandrels from a reactive gas stream capable of pyrolytically depositing silicon wherein the gas stream is regulated in such a manner that the silicon deposition rate remains constant per cubic centimeter of mandrel surface throughout the deposition process.

REFERENCES:
patent: 3120451 (1964-02-01), Schmidt et al.
patent: 3853974 (1974-12-01), Reuschel

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