Process for depositing elemental silicon semiconductor material

Details Process for depositing elemental silicon semiconductor material Process for depositing elemental silicon semiconductor material

1978-04-28

1979-04-10

Smith, John D.

Coating processes

Measuring, testing, or indicating

23230A, 23232C, 23232E, 423350, 427 10, 427 86, 427248R, 427 95, C23C 1106, C01B 3302

Patent

active

041489314

ABSTRACT:
A semiconductor material, such as elemental silicon, is deposited on heated rod-shaped mandrels from a reactive gas stream capable of pyrolytically depositing silicon wherein the gas stream is regulated in such a manner that the silicon deposition rate remains constant per cubic centimeter of mandrel surface throughout the deposition process.

REFERENCES:
patent: 3120451 (1964-02-01), Schmidt et al.
patent: 3900660 (1975-08-01), Bradley
patent: 3933985 (1976-01-01), Rodgers
patent: 4068020 (1978-01-01), Reuschel

Affiliated with

Also associated with

Rating

Process for depositing elemental silicon semiconductor material does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for depositing elemental silicon semiconductor material , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for depositing elemental silicon semiconductor material will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1071846