Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Havin growth from molten state
Patent
1994-10-14
1998-05-12
Garrett, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Havin growth from molten state
117 82, 118723MW, 118723MP, 118723ME, C30B 2502
Patent
active
057499667
ABSTRACT:
An improved plasma enhanced chemical vapor deposition (CVD) reactor is provided for the synthesis of diamond and other high temperature materials such as boron nitride, boron carbide and ceramics containing oxides, nitrides, carbides and borides, or the like. An aspect of the present method enables a plasma to substrate distance to be optimized for a given surface. This has been found to enable a substantially uniform thin film coating of diamond or like material to be deposited over a substrate.
REFERENCES:
patent: 4958590 (1990-09-01), Goforth
patent: 5230740 (1993-07-01), Pinneo
patent: 5234502 (1993-08-01), Mochizuki et al.
patent: 5449412 (1995-09-01), Pinneo
Garrett Felisa
Modular Process Technology Corp.
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