Process for depositing a thin-film layer of magnetic material on

Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board

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204192M, 365171, 427 94, 427 96, 427 99, 427131, H01L 21316, H01L 2194

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045296219

ABSTRACT:
The present invention is directed to a process for depositing a thin-film layer of magnetic material onto an insulative dielectric layer of a semiconductor substrate such that the layer of magnetic material completely and permanently adheres to the insulative dielectric layer. A product within the scope of the present invention is prepared by taking a semiconductor substrate, such as a silicon wafer, and through a chemical-vapor deposition process depositing a layer of an insulative dielectric (such as the silicon dioxide or silicon nitride) on the layer, and subsequently depositing a layer of a magnetic material (such as a nickel-iron alloy or a manganese-bismuth alloy) through a sputtering process onto the insulative dielectric layer.

REFERENCES:
patent: 3161946 (1964-12-01), Birkenbeil
patent: 3573485 (1971-04-01), Ballard
patent: 3702991 (1972-11-01), Bate et al.
patent: 3800193 (1974-03-01), Ashar et al.
patent: 4149301 (1979-04-01), Cook
Petersen, "Thin Film Magnetic Heads," IBM TDB, vol. 21, No. 12, May 1979, p. 5002.
Ahn, "NiFe Films Mixed with SiO.sub.2 for Improved Adhesion," IBM TDB, vol. 18, No. 10, Mar. 1976, p. 3523.
C. Morosanu et al., "Thin Film Preparation by Plasma and Low Pressure CVD in a Horizontal Reactor," 31 Vacuum, 309-313, No. 7 (1981).

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