Process for depositing a thermal CVD film of Si or Ge using a hy

Details Process for depositing a thermal CVD film of Si or Ge using a hy Process for depositing a thermal CVD film of Si or Ge using a hy

1991-12-03

1993-05-25

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

136258, 156612, 156613, 156614, 4272551, 437937, H01L 21205

Patent

active

052140024

ABSTRACT:
A process for depositing a thin semiconductor film includes the steps of depositing a thin film on a substrate by feeding onto the surface of the substrate being heated a gaseous starting material containing a constituent element of the thin film, and feeding excited hydrogen to the thin film without exposing the thin film to the ambient air. Disilane was fed together with hydrogen carrier gas onto a quartz substrate to deposit thereon a thin amorphous silicon film, to which excited hydrogen from a hydrogen plasma was then fed to modify the deposited thin silicon film. As a result, the photoconductivity of the thin silicon film was improved.

REFERENCES:
patent: 4331486 (1982-05-01), Chenevas-Paule et al.
patent: 4634605 (1987-01-01), Wisemann
patent: 4683147 (1987-07-01), Eguchi et al.
patent: 4859617 (1984-08-01), Nomoto et al.
patent: 4908330 (1990-03-01), Arai et al.
patent: 4914052 (1990-04-01), Kanai
patent: 4957772 (1990-09-01), Saitoh et al.
patent: 4971832 (1990-11-01), Arai et al.
Del Valle et al., 14th IEEE Pholovoltaic Specialists Conf., Jan. 7-10, 1980, pp. 202-207.
Apole et al., Solar Energy Materials 17 (1988) pp. 391-405.
"Hydrogenation of Low-Pressure Chemical-Vapor Deposition Silicon Thin Films", by Zhang, P. X. et al., Phys. Review B, vol. 36, No. 17, 1987 pp. 9168-9170.
"Preparation Of Amorphous Silicon Films by Chemical Vapor Deposition From Higher Silanes Si.sub.n H.sub.2n+2 (n>1)", by Gau, S. C. et al., Appl. Phys. Lett. 39(5), Sep. 1, 1981, pp. 436-438.
"Low Defect Density Amorphous Hydrogenated Silicon Prepared By Homogeneous Chemical Vapor Deposition", By Scott et al., Appl. Phys. Lett. 40(11), Jun. 1, 1982, pp. 973-975.
"Hydrogenated Amorphous Silicon Films Deposited In A Helium Atmosphere", By Chu et al., Appl. Phys. 60(12), Dec. 15, 1986, pp. 4268-4272.
"Hydrogenation Of Evaporated Amorphous Silicon Films By Plasma Treatment", by Kaplan et al., Appl. Phys. Lett. 33(5), Sep. 1, 1978, pp. 440-442.
Pankove et al., "Hydrogen and Dehydrogenation Of Amorphous And Crystalline Silicon", Appl. Phys. Lett., vol. 32, No. 7, Apr. 1, 1978, pp. 439-441.

Affiliated with

Also associated with

Rating

Process for depositing a thermal CVD film of Si or Ge using a hy does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for depositing a thermal CVD film of Si or Ge using a hy, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for depositing a thermal CVD film of Si or Ge using a hy will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-897153