Process for depositing a III-V semi-conductor layer on a substra

Details Process for depositing a III-V semi-conductor layer on a substra Process for depositing a III-V semi-conductor layer on a substra

1978-09-12

1981-02-10

Smith, John D.

Coating processes

Electrical product produced

Condenser or capacitor

156613, 156DIG70, 427226, 4272481, H01L 21205, H01L 2120

Patent

active

042502055

ABSTRACT:
A process for depositing a layer of a semiconductor composition comprising elements M(III) and M'(V) selected from group III and group V elements, respectively onto a substrate. The process comprises: contacting the substrate with a coordination compound in the gaseous phase, the compound having the formula: ##STR1## wherein M(III) and M'(V) are bonded to one another by a donor/acceptor bond and wherein R.sub.1, R.sub.2, R.sub.3, R.sub.4, R.sub.5, and R.sub.6 are chemical radicals other than hydrogen with at least one of the radicals R.sub.1, R.sub.2, and R.sub.3 being an electron donor serving to stabilize the donor/acceptor bond between elements M(III) and M'(V). The process further comprises decomposing the coordination compound so as to break the chemical bonds between the radicals and the elements M(III) and M'(V) without breaking the donor/acceptor bond, so as to cause the semi-conductor composition to deposit onto the substrate.
Substrates having a semi-conductor layer comprising elements selected from groups III and V deposited by the process of the invention are also disclosed.

REFERENCES:
patent: 3922475 (1975-11-01), Manasevit
patent: 4141778 (1979-02-01), Domrachev et al.
patent: 4147571 (1979-04-01), Stringfellow et al.
Coates et al., "Organometallic Compounds", Methyrn & Co. Ltd., London, pp. 297-313; 348-361. _
Haran, "Contribution a l'Etude des Complexes Formes par les Chloroalkylgallium avec dex Bases de Lewis Usuelles: NR.sub.3, PR.sub.3, OR.sub.2, SR.sub.2 ", Sep., 1972.

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