Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k
Patent
1991-07-12
1993-08-10
Lusigan, Michael
Superconductor technology: apparatus, material, process
High temperature , per se
Having tc greater than or equal to 150 k
505731, 505732, 505730, 427 62, 427596, 4274191, 20419224, B05D 306, B05D 512
Patent
active
052349012
ABSTRACT:
Improvement in a process for depositing a thin film on an oxide superconductor thin film deposited previously on a substrate.
A surface of the thin film of oxide superconductor is irradiated with laser beam pulses in high-vacuum of lower than 1.times.10.sup.-6 Torr before said another thin film is deposited thereon.
The invention is applicable to fabrication of electronics devices such as Josephson element or superconducting transistors.
REFERENCES:
Aizaki et al, "YBa.sub.2 Cu.sub.3 O.sub.y superconducting thin film obtained by laser annealing", Jpn. J. Appl. Phys. 27(2) Feb. 1988 L231-L233.
Singh et al, "Excellent thermal stability of superconducting properties in YBa.sub.2 Cu.sub.3 O.sub.7 films irradiated by pulsed excimer lasers", Appl. Phys. lett. 59(11), Sep. 1991 pp. 1380-1382.
Workshop on High Temperature Superconducting Electron Devices, Moore et al, "Superconducting Thin Films for Device Applications," pp. 281-284 (Jun. 7, 1989).
Extended Abstracts of the 20th Conference on Solid State Devices and Materials, Yonezawa et al, "Preparation of High Tc Oxide Superconducting Films by Laser Annealing," pp. 435-438 (Aug. 1988).
Japanese Journal of Applied Physics, vol. 28, No. 11, Otsubo et al, "Crystallization induced by laser irradiation in Ba-Y-Cu-O superconducting films prepared by laser ablation," pp. 2211-2218 (Nov. 1989).
Materials Letters, vol. 8, No. 5, Perrin et al, "Annealing effects on the 110 K transition in the Bi.sub.1 Sr.sub.1 Ca.sub.1 Cu.sub.2 oxide superconductor," pp. 165-170 (Jun. 1989).
Iiyama Michitomo
Saitoh Mitsuchika
King Roy V.
Lusigan Michael
Sumitomo Electric Industries Ltd.
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