Process for defining polycrystalline silicon patterns

Details Process for defining polycrystalline silicon patterns Process for defining polycrystalline silicon patterns

1975-10-29

1977-05-31

Drummond, Douglas J.

Metal treatment

Compositions

Heat treating

29578, 148187, 156628, 156657, 156662, H01L 2126

Patent

active

040267334

ABSTRACT:
A process and method for accurately defining polycrystalline silicon patterns from a masking member. The critical dimensions of the silicon patterns are controlled by a diffusion step. Self-limiting etching is achieved through use of an etchant which discriminates between doped and undoped polycrystalline silicon. The process which provides significant advantages in production processing, permits fabrication of narrower gates and smoother edges on elongated silicon strips.

REFERENCES:
patent: 3600651 (1971-08-01), Duncan
patent: 3801390 (1974-04-01), Lepselter et al.
patent: 3808068 (1974-04-01), Johnson et al.
patent: 3892606 (1975-07-01), Chappelow et al.
patent: 3940288 (1976-02-01), Takagi et al.
patent: 3980507 (1976-09-01), Carley

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