Process for defining and forming an active region of very limite

Details Process for defining and forming an active region of very limite Process for defining and forming an active region of very limite

1991-07-09

1992-07-14

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 27, 437149, 437953, 148DIG111, H01L 2122

Patent

active

051302721

ABSTRACT:
Along the outline of a first doped region, a first mask is formed. The mask is made up of a dielectric opposed to the oxygen diffusion. Another mask is created within this first mask, using a process of selective thermal oxidation. The second mask is used to implant dopant in a second region which will only be defined along the outlines of the first region.

REFERENCES:
patent: 3793721 (1974-02-01), Wakefield et al.
patent: 4503598 (1985-03-01), Vora et al.
patent: 4774198 (1988-09-01), Contiero et al.
patent: 4879254 (1989-11-01), Tsuzuki et al.
patent: 4960723 (1990-10-01), Davies

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