Process for defining and forming an active region of very limite

Fishing – trapping – and vermin destroying

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

437 27, 437149, 437953, 148DIG111, H01L 2122

Patent

active

051302721

ABSTRACT:
Along the outline of a first doped region, a first mask is formed. The mask is made up of a dielectric opposed to the oxygen diffusion. Another mask is created within this first mask, using a process of selective thermal oxidation. The second mask is used to implant dopant in a second region which will only be defined along the outlines of the first region.

REFERENCES:
patent: 3793721 (1974-02-01), Wakefield et al.
patent: 4503598 (1985-03-01), Vora et al.
patent: 4774198 (1988-09-01), Contiero et al.
patent: 4879254 (1989-11-01), Tsuzuki et al.
patent: 4960723 (1990-10-01), Davies

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Process for defining and forming an active region of very limite does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for defining and forming an active region of very limite, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for defining and forming an active region of very limite will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-334480

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.