Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent
1996-08-08
1998-07-14
Garrett, FeLisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
117 14, 117200, C30B 1520
Patent
active
057797919
ABSTRACT:
A Czochralski method of producing a single crystal silicon ingot having a uniform thermal history from a silicon melt contained in a crucible coaxial with the ingot. In the process the pulling rate of the end-cone of the ingot is maintained at a relatively constant rate which is comparable to the pulling rate for the second half of the main body of the ingot. During the pulling of the end-cone of the crystal at a constant rate, the process may be further refined by, either independently or in combination, increasing the heat supplied to the melt, reducing the crystal rotation rate and/or reducing the crucible rotation rate. The second half of the main body of a single crystal silicon ingot grown in accordance with this process exhibits a relatively uniform axial concentration of flow pattern defects and amount of oxygen precipitated.
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H. Harada, T. Abe and J. Chikawa, "Oxygen Precipitation Enhanced With Vacancies In Silicon," Semiconductor Silicon 1986, pp. 76-85, Eds., H.R. Huff, T. Abe and B.O. Kolbesen Pennington, NJ; The Electrochem Soc., 1986) .
Chandrasekhar Sadasivam
Drafall Larry E.
Falster Robert J.
Holzer Joseph C.
Kim Kyong-Min
Garrett Felisa
MEMC Electronic Materials , Inc.
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