Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent
1997-06-19
1999-02-09
Hiteshew, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
117201, 117900, 219390, 356372, C30B 1520
Patent
active
058688315
ABSTRACT:
A process and an apparatus control the growth of a crystal, which growth is governed by a set of measurable and non-measurable variables. The process includes establishing an on-line simulation software working with a reduced number of variables, the reduction of variables being performed by using a projection algorithm; speeding up the on-line simulation software by generating data banks in which values of off-line precalculated variables are stored; tuning the on-line simulation software by adjusting the results predicted by on-line simulations to the results obtained by off-line simulations and by measurements; and establishing a control loop and controlling at least one of the variables in real time, the control loop using the speeded up and tuned on-line simulation software as an on-line observer.
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Ammon Wilfried Von
Dornberger Erich
Dupret Francois
Olkrug Hans
Van den Bogaert Nathalie
Hiteshew Felisa
Wacker Siltronic Gesellschaft fur Halbleitermaterialien AG
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