Process for controlling indium clustering in ingan leds...

Details Process for controlling indium clustering in ingan leds... Process for controlling indium clustering in ingan leds...

2006-11-08

2010-02-23

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

C257S094000, C257SE33005

Reexamination Certificate

active

07666696

ABSTRACT:
Exemplary embodiments provide MQW semiconductor devices and methods for their manufacture. The MQW semiconductor devices can be formed by growing a MQW active region over a nanoscale periodic strain array. By using the nanoscale periodic strain array, the position, size, and composition of the In-rich clusters in the MQW active region can be controlled. This control of In-rich clusters can result in tighter wavelength control, which can be important for applications, such as, for example, lasers and LEDs.

REFERENCES:
patent: 7485892 (2009-02-01), Ooi et al.
patent: 2002/0182765 (2002-12-01), Tran et al.

Affiliated with

Also associated with

Rating

Process for controlling indium clustering in ingan leds... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for controlling indium clustering in ingan leds..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for controlling indium clustering in ingan leds... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4169975