Process for controlling dopant diffusion in a semiconductor laye

Details Process for controlling dopant diffusion in a semiconductor laye Process for controlling dopant diffusion in a semiconductor laye

1998-01-30

2000-11-28

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

With specified dopant

257 65, 257 66, 257610, 257611, 257612, 257652, H01L 29167

Patent

active

061539201

ABSTRACT:
A semiconductor device having a carbon-containing region with an advantageous concentration profile is disclosed. The carbon is introduced into a region of the substrate and at a depth below the space-charge layer of the device and at a concentration such that the carbon atoms absorb point defects created in the substrate during device fabrication but do not adversely affect the leakage characteristics of the device.

REFERENCES:
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patent: 5338945 (1994-08-01), Baliga et al.
patent: 5731626 (1998-03-01), Eagleshame et al.
patent: 6043139 (2000-03-01), Eaglesham et al.
"Suppression of Oxidation-Enhanced Boron Diffusion in Silicon by Carbon Implantation and Characterization of MOSFET's with Carbon-Implanted Channels", by Ban, I. et al., IEEE Transactions on Electron Devices, vol. 44, No. 9 pp. 1544-1551 (Sep. 1997).
"Dislocation Formation and B Transient Diffusion in C Coimplanted Si", by Cacciato, A. et al., J. Appl. Phys., 79(5) pp. 2314-2325 (Mar. 1, 1996).
"Effects of Low Dose Silicon, Carbon, and Oxygen Implantation Damage on Diffusion of Phosphorous in Silicon", by Chaudhry, S. et al., J. Electrochem. Soc., vol. 141, No. 12, pp. 3516-3521 (Dec. 1994).
"Reduction of Transient Boron Diffusion in Preamorphized Si by Carbon Implantation", by Nishikawa, S. et al., Appl. Phys. Lett., 60 (18), pp. 2270-2272 (May 4, 1992).
"Role of C and B Clusters in Transient Diffusion of B in Silicon", by Cowern, N. E. B. et al., Appl. Phys. Lett., 68 (8), pp. 1150-1152 (Nov. 6, 1995).
"Suppression of Dislocation Formation in Silicon by Carbon Implantation", by Simpson, T. W. et al., Appl. Phys. Lett., pp. 2857-2859 (Nov. 6, 1995).

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