Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Havin growth from molten state
Patent
1998-11-04
2000-12-12
Utech, Benjamin L.
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Havin growth from molten state
117929, C30B 1902, C30B 2904
Patent
active
061592862
ABSTRACT:
The present invention describes a novel abrasive tool that contains abrasive particles distributed in a predetermined pattern. Such a pattern is produced by fabricating two-dimensional slices and subsequently assembling and consolidating them into a three-dimensional tool. Abrasive particles 20 may be incorporated during the process of making these two-dimensional slices, or they may be planted afterwards into these slices 100 that contains matrix powder. In the latter case, the planting may be guided by a template 110 with apertures 114 laid in a specific pattern.
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High Temperatures-High Pressures, 1995/1996, vols. 27/28, pp. 523-546 "Mechanism of the Solvent-Assisted Graphite to Diamond Transition Under High Pressure: Implications for the Selection of Catalysts".
Champagne Donald L.
Utech Benjamin L.
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