Process for controlling at least one IGBT type transistor enabli

Details Process for controlling at least one IGBT type transistor enabli Process for controlling at least one IGBT type transistor enabli

1998-06-11

1999-10-19

Callahan, Timothy P.

Miscellaneous active electrical nonlinear devices, circuits, and

Specific identifiable device, circuit, or system

Utilizing a three or more electrode solid-state device

327588, H02M 7162

Patent

active

059695692

ABSTRACT:
This invention relates to a process for controlling at least one IGBT type transistor enabling its operation under irradiation, in which the value of the threshold value Vge.sub.s of the gate-emitter voltage of a first IGBT transistor (30) under irradiation is measured, and the voltage applied between the gate and the emitter of at least one second IGBT transistor under irradiation is varied during operation, so as to slave the threshold voltage Vge.sub.s of this (these) IGBT transistor(s) to a set value despite the drift caused by irradiation.

REFERENCES:
patent: 5801936 (1998-09-01), Mori et al.
M. Marceau, Intelligent Motion Proceedings, pp. 507 to 517, "Vulcan: An Hardened Amplifier for DC Motor", 1996.

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