Radiation imagery chemistry: process – composition – or product th – Electric or magnetic imagery – e.g. – xerography,... – Process of making radiation-sensitive product
Patent
1990-07-02
1991-12-24
Martin, Roland
Radiation imagery chemistry: process, composition, or product th
Electric or magnetic imagery, e.g., xerography,...
Process of making radiation-sensitive product
430135, 420579, 148243, 148284, G03G 5082, C21D 100
Patent
active
050751913
ABSTRACT:
Disclosed is a process for treating particles of selenium alloy to reduce fractionation when the particles are subsequently vacuum evaporated onto a substrate which comprises (1) heating particles of an alloy of selenium and an alloying component selected from the group are exposed to oxygen; (2) exposing the particles to water vapor; and (3) subjecting the particles previously exposed to oxygen and water vapor to a vacuum. Also disclosed is a process which comprises (1) providing particles of an alloy of selenium and an alloying component selected from the group consisting of tellurium, arsenic, and mixtures thereof; (2) forming selenium oxide on the surfaces of the particles; (3) converting the selenium oxide on the particle surfaces to selenious acid; and (4) removing the selenious acid from the particle surfaces.
REFERENCES:
patent: 4780386 (1988-10-01), Hordon et al.
patent: 4822712 (1989-04-01), Foley et al.
patent: 4842973 (1989-06-01), Badesha et al.
patent: 4859411 (1989-08-01), Sweatman et al.
patent: 4894307 (1990-01-01), Badesha et al.
Badesha Santokh S.
Elder Fred A.
Hordon Monroe J.
Kowalczyk Lawrence E.
LaForce Roger W.
Byorick Judith L.
Martin Roland
Xerox Corporation
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