Process for controlled orientation of ferroelectric layers

Details Process for controlled orientation of ferroelectric layers Process for controlled orientation of ferroelectric layers

1998-02-17

1999-12-07

Chaudhari, Chandra

Semiconductor device manufacturing: process

Having metal oxide or copper sulfide compound semiconductor...

438 3, 438240, 438761, H01L 2120

Patent

active

059982365

ABSTRACT:
There is disclosed a structure of and a method for fabricating a ferroelectric film on a non-conductive substrate. An adhesion layer, e.g., a layer of silicon dioxide and a layer of zirconium oxide, is deposited over a substrate. A conductive layer, e.g., a noble metal, a non-noble metal, or a conductive oxide, is deposited over the adhesion layer. A seed layer, e.g., a compound containing lead, lanthanum, titanium, and oxygen, with a controlled crystal lattice orientation, is deposited on the conductive layer. This seed layer has ferroelectric properties. Over the seed layer, another ferroelectric material, e.g., lead zirconium titanate, can be deposited with a tetragonal or rhombohedral crystalline lattice structure with predetermined and controlled crystal orientation.

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