Process for control of contours formed by etching substrates

Details Process for control of contours formed by etching substrates Process for control of contours formed by etching substrates

2006-12-12

2006-12-12

Ahmed, Shahim (Department: 1765)

Etching a substrate: processes

Forming or treating an article whose final configuration has...

C430S005000

Reexamination Certificate

active

07147789

ABSTRACT:
The present invention provides a process for controlling the contour of a feature in a transition area made by etching a substrate. This process includes applying a patterned resist mask to the substrate to form a plurality of mask openings and mask land areas. The mask land areas are sized and spaced to a control the contour of a feature on the substrate.

REFERENCES:
patent: 5362584 (1994-11-01), Brock et al.
patent: 5421934 (1995-06-01), Misaka et al.
patent: 5846442 (1998-12-01), Pasco
patent: 5935451 (1999-08-01), Dautartas et al.
patent: 6423239 (2002-07-01), Cathey et al.

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