Process for contacting and interconnecting semiconductor devices

Fishing – trapping – and vermin destroying

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

437192, 437194, 437200, 357 71, H01L 2144

Patent

active

050700367

ABSTRACT:
An improved structure and process for contacting and interconnecting semiconductor devices within a VLSI integrated circuit are described. The structure includes several regions which cooperate to provide (1) contacts of low electrical resistance to semiconductor device terminals, (2) barriers to unwanted metallurgic reactions, (3) strong bonds between major regions of the structure, (4) overall mechanical strength, (5) a primary current path of low electrical resistance, (6) a secondary current path in parallel with the primary current path, and (7) circuit bond pads for use in making electrical connections to the VLSI circuit. Because of the structure's mechanical strength, semiconductor devices may be placed beneath circuit bond pads. The inventive process facilitates accurate control of the composition and thickness of each of the several regions within the material structure.

REFERENCES:
patent: 3906540 (1975-09-01), Hollins
patent: 4680612 (1987-07-01), Hieber et al.
patent: 4784973 (1988-11-01), Stevens et al.
patent: 4829024 (1989-05-01), Klein et al.
patent: 4910580 (1990-03-01), Kuecher et al.
patent: 4926237 (1990-05-01), Sun et al.
R. V. Joshi et al., "Novel Self-Aligned W/TiN/TiSi.sub.2 Contact Structure", Applied Physics Letters, 54 (17) Apr. 24, '89, pp. 1672-1674.
J. R. Black, "Physics of Electromigration", Proceedings of 12th Reliability Physics Symposium, pp. 142-149, 1974.
J. G. J. Chern, W. G. Oldham, and N. Cheung, "Electromigration in Al/Si Contacts-Induced Open-Circuit Failures", IEEE Transactions on Electron Devices, vol. ED-33, pp. 1256-1262, 1986.
J. G. J. Chern, W. G. Oldham, and N. Cheung, "Contact-Electromigration-Induced Leakage Failure in Aluminum-Silicon to Silicon Contacts", IEEE Transactions on Electron Devices, vol. ED-32, pp. 1341-1346, 1985.
P. A. Flinn, D. S. Gardner, and W. D. Nix, "Measurement and Interpretation of Stress in Aluminum-Based Metallization as a Function of Thermal History", IEEE Transactions on Electron Devices, vol. ED-34, pp. 689-699, 1987.
J. W. McPherson and C. F. Dunn, "A Model for Stress -Induced Metal Notching and Voiding in Very-Large-Scale Integrated Al-Si (1%) Metallization", Journal of Vacuum Science and Technology, vol. B5, pp. 1321-1325, 1987.
D. S. Gardner, T. L. Michalka, K. C. Sawaswat, T. W. Barbee, J. P. McVitte, and J. D. Meindl, "Layered and Homogeneous Films of Aluminum and Aluminum/Silicon with Titanium and Tungsten for Multilevel Interconnects", IEEE Transactions on Electron Devices, vol. ED-32, pp. 174-183, 1985.
K. Hinode, N. Owada, T. Terada and S. Iwata, "Silicon Take-Up by Aluminum Layered with Refractory Metals", IEEE Transactions on Electron Devices, vol. ED-34 pp. 700-705, 1987.
R. E. Jones and L. D. Smith, "Contact Spiking and Electromigration Passivation Cracking Observed for Titanium Layered Aluminum Metallization", Proceedings of the IEEE VLSI Multilevel Interconnect Conference, 1985.
I. Suni, M. Maenpaa, and M. A. Nicolet, "Thermal Stability of Hafnium and Titanium Nitride Diffusion Barriers in Multilayer Contacts to Silicon", Journal of the Electrochemical Society, 130 No. 5, pp. 1215-1218, 1983.
S. S. Ang, "Titanium Nitride Films with High Oxygen Concentration", Journal of Electronic Materials, vol. 17 No. 2, pp. 95-100, 1988.
P. J. Rosser and G. J. Tomkins, "Self Aligned Nitridation of TiSi.sub.2 : A TiN/TiSi.sub.2 Contact Structure", Material Research Society Symposiuim Proceedings, 1985.
M. Wittmer, "Interfacial Reactions Between Aluminum and Transition-Metal Nitride and Carbide Films", Journal of Applied Physics, vol. 53, No. 2, pp. 1007-1012, 1982.
P. Singer, "Multi-Chip Packaging on Silicon Substrates", Semiconductor International, p. 34, Jun. 1987.
R. Bowlby, "The DIP May Take its Final Bows", IEEE Spectrum, pp. 37-42, Jun. 1985.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Process for contacting and interconnecting semiconductor devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for contacting and interconnecting semiconductor devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for contacting and interconnecting semiconductor devices will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1696825

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.