Process for contact photolithography utilizing a photomask havin

Details Process for contact photolithography utilizing a photomask havin Process for contact photolithography utilizing a photomask havin

1974-04-01

1976-02-03

Kimlin, Edward C.

Gas separation: apparatus

Electric field separation apparatus

Electrode cleaner, apparatus part flusher, discharger, or...

96 351, 96 362, 96 383, 96 44, G03C 500, G03C 506

Patent

active

039363015

ABSTRACT:
In contact type photolithographic masking processes for fabricating planar structures, a photoresist is applied to a wafer and a mask is placed over the photoresist. Illumination through the mask, which has a pattern of opaque areas, produces a photochemical reaction in the photoresist which upon developing creates a duplicate of the mask pattern. However, the photoresist is conventionally applied by a spinning process and the rotation produces a build-up of the photoresist around the edges of the wafer. This build-up prevents the pattern portion of the mask from making good physical contact with the photoresist with a resultant decrease in reproducibility and accuracy of the fabricated pattern. A modified mask is formed with a channel corresponding to the peripheral build-up. The channel accepts the build-up so that good contact may be maintained between the photoresist and the patterned portion of the mask.

REFERENCES:
patent: 2174882 (1939-10-01), Huebner
patent: 2399975 (1946-05-01), Ball
patent: 2793442 (1957-05-01), Ozga
patent: 3744904 (1973-07-01), Loprest et al.

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