Process for concurrent formation of base diffusion and p.sup.+ p

Details Process for concurrent formation of base diffusion and p.sup.+ p Process for concurrent formation of base diffusion and p.sup.+ p

1980-06-09

1981-04-21

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148188, 148191, H01L 21225

Patent

active

042630665

ABSTRACT:
A single source predeposition is required to concurrently form a base diffusion profile and p.sup.+ profile. For a boron doped silicon semiconductor devices this can be accomplished by depositing a silicon nitride layer directly over a boron source glass layer. After opening windows to the underlying silicon, diffusion in a wet oxide atmosphere results in formation of a resulting oxide in the windows with expenditure of boron by diffusion into this oxide as well as diffusion into the underlying substrate at a reduced concentration. In adjacent areas masked by the silicon nitride the boron source diffuses unidirectionally into the substrate yielding a maximum dopant concentration.

REFERENCES:
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patent: 3592707 (1971-07-01), Jaccodine
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patent: 3915767 (1975-10-01), Welliver
patent: 4006046 (1977-02-01), Pravin
patent: 4170502 (1979-10-01), Watakabe

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