Process for cleaving a wafer layer from a donor wafer

Details Process for cleaving a wafer layer from a donor wafer Process for cleaving a wafer layer from a donor wafer

2005-04-26

2005-04-26

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Semiconductor substrate dicing

With attachment to temporary support or carrier

C438S458000

Reexamination Certificate

active

06884697

ABSTRACT:
The invention relates to improvements in a process and annealing device for cleaving a wafer layer along a weakened zone in a donor wafer using a thermal anneal. In one improvement, at least one donor wafer is provided in a substantially horizontal position during the thermal anneal to prepare a wafer layer which, after detachment, has a cleaved surface with reduced surface roughness irregularities. The donor wafer can be preferably placed inside a chamber between two heating electrodes during the thermal anneal. The thermal anneal can be conducted to detach the wafer layer or the donor wafer to mechanical action to detach the wafer layer after the thermal anneal is conducted. Either way, a cleaved surface is provided on the detached wafer layer that does not include isolated dense areas adjacent the wafer layer periphery.

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