Process for cleaning semiconductor devices

Details Process for cleaning semiconductor devices Process for cleaning semiconductor devices

1993-12-23

1996-10-22

Czaja, Donald E.

Cleaning and liquid contact with solids

Processes

For metallic, siliceous, or calcareous basework, including...

134 36, 134902, 437946, B08B 308

Patent

active

055672442

ABSTRACT:
The present invention provides a process for cleaning semiconductor devices which enables the contamination of copper to maintained under a level of about 10.sup.9 atoms/cm.sup.2 to meet the qualification of DRAMs of equal to or greater than 64M bits in capacity by means of supplying O.sub.3 to a solution, resulting in great reproducibility and reliability. According to the present invention, a mechanism for removing a copper impurity in a semiconductor device uses oxygen to form a cupric oxide, which forms a cupric fluoride, which is then removed from the solution.

REFERENCES:
patent: 4171242 (1979-10-01), Liu
patent: 5232511 (1993-10-01), Bergman
"Ultra-Clean Low Temperature SI Processes Under The Assistance Of Energy Controlled Ion Bombardment," 1991 International Conference On Solid State Devices And Materials, pp. 481-483, By T. Ohmi.

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