Process for cleaning an electrostatic chuck of a plasma etching

Etching a substrate: processes – Etching and coating occur in the same processing chamber

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216 71, 134 11, 134 12, 134 13, 134 21, H05H 100

Patent

active

057469288

ABSTRACT:
A method of cleaning an electrostatic chuck of a plasma etching apparatus wherein a dummy wafer is placed on the chuck, the chamber evacuated, and an RF voltage applied that is greater than the normal RF voltage used to etch.

REFERENCES:
patent: 5310453 (1994-05-01), Fukasawa et al.
patent: 5382311 (1995-01-01), Ishikawa et al.
patent: 5507874 (1996-04-01), Su et al.
patent: 5585012 (1996-12-01), Wu et al.
patent: 5671119 (1997-09-01), Huang et al.

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