Etching a substrate: processes – Etching and coating occur in the same processing chamber
Patent
1996-06-03
1998-05-05
Chapman, Mark
Etching a substrate: processes
Etching and coating occur in the same processing chamber
216 71, 134 11, 134 12, 134 13, 134 21, H05H 100
Patent
active
057469288
ABSTRACT:
A method of cleaning an electrostatic chuck of a plasma etching apparatus wherein a dummy wafer is placed on the chuck, the chamber evacuated, and an RF voltage applied that is greater than the normal RF voltage used to etch.
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patent: 5507874 (1996-04-01), Su et al.
patent: 5585012 (1996-12-01), Wu et al.
patent: 5671119 (1997-09-01), Huang et al.
Chang Kuang-Hui
Chu Po-Tao
Yen Shih Kuei
Ackerman Stephen B.
Chapman Mark
Saile George O.
Stoffel Wolmar J.
Taiwan Semiconductor Manufacturing Company Ltd
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