Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2006-02-07
2006-02-07
Norton, Nadine G. (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S014000, C216S084000, C216S086000, C216S089000, C356S945000
Reexamination Certificate
active
06995091
ABSTRACT:
The invention relates to a process for chemically mechanically polishing and grinding wafers. The CMP slurry that is used for grinding is analyzed using slurry atomic absorption spectroscopy. This allows rapid and sensitive analysis of the slurry constituents, in particular of interfering ions. The process can be automated and makes it possible to process wafers with a constant quality. Furthermore, rapid fault analysis or optimization of the process parameters used during the grinding is possible.
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Schneider et al., Spectrochimica Acta B Part B (1995), 1557-71.
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Susanne Hauptkorn et al.: “Determination of Silicon in Titanium Dioxide and Zirconium Dioxide by Electrothermal Atomic Absorption Spectrometry Using the Slurry Sampling Technique”,Journal of Analytical Atomic Spectrometry, Mar. 1993, vol. 9, pp. 463-468.
Germar Schneider et al.: “Slurry and liquid sampling using electrothermal atomic absorption spectrometry for the analysis of zirconium dioxide based materials”,Spectrochimica ActaPart B vol. 50, 1995, pp. 1557-1571.
Chen Eric B.
Greenberg Laurence A.
Infineon - Technologies AG
Locher Ralph E.
Stemer Werner H.
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