Process for chemical vapor deposition using precursor compounds

Details Process for chemical vapor deposition using precursor compounds Process for chemical vapor deposition using precursor compounds

1994-11-23

1996-02-20

King, Roy V.

Coating processes

Coating by vapor, gas, or smoke

427250, 427124, 4271261, 252512, 252518, C23C 1600, H01B 100

Patent

active

054927250

ABSTRACT:
Chemical vapor deposition (CVD) is accomplished by the reaction of vapors of certain novel compounds containing ligands derived from partially hydrogenated aromatic nitrogen-containing heterocyclic compounds. For example, tetrakis(1,4-dihydropyridinato)titanium reacts at 400.degree. C. to deposit films containing titanium metal. These films show good conformality, electrical conductivity and are suitable as a contact and adhesion layers in semiconductor microelectronics. Similar compounds containing 1,4-dihydropyridinato ligands can be used as CVD sources for a wide variety of elements, including metals, semiconductors and non-metals.

REFERENCES:
patent: 4292394 (1981-09-01), Chu et al.
patent: 4301196 (1981-11-01), McCormack et al.
patent: 5110384 (1992-05-01), Dudek et al.
patent: 5139999 (1992-08-01), Gordon et al.

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