Process for chemical vapor deposition of main group metal nitrid

Details Process for chemical vapor deposition of main group metal nitrid Process for chemical vapor deposition of main group metal nitrid

1991-11-08

1993-01-12

Beck, Shrive

Coating processes

Coating by vapor, gas, or smoke

Mixture of vapors or gases utilized

4272551, 4272481, 427314, 4271261, 427255, C23C 1600

Patent

active

051789116

ABSTRACT:
A process for depositing a thin film of a main group metal nitride, e.g., AlN, GaN or Sn.sub.3 N.sub.4, is provided. The vapors of a main group metal amido compound are mixed with ammonia gas and allowed to react near a substrate heated to a temperature in the range of 100.degree. C. to 400.degree. C. resulting in deposition of a film on the substrate.

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Roy G. Gordon et al., "Silicon Dimethyl Complexes and Ammonia as Precursors for the Atmospheric Pressure Chemical Vapor Deposition of Silicon Nitride Thin Films" Chem. Mat. 2(5), 480 (Sep.-Oct., 1990).
Roy G. Gordon et al., "Atmospheric Pressure Chemical Vapor Deposition of Gallium Nitride Thin Films" Mat. Res. Soc. Symp. vol. 204, Materials Research Society, Pittsburgh, Pa.; pp. 95-99 (1991).
Roy G. Gordon et al., "Atmospheric Pressure Chemical Vapor Deposition of Aluminum Nitride Thin Films at 200.degree.-250.degree. C." J. Mater. Res. 6(1), 5-7 (Jan, 1991).
Anonymous "Ammonolysis of Tetrakisdimethylaminosilane for Low Pressure Chemical Vapor Deposition of Silicon Nitride" Res. Disclosure 314, 494 (Jun., 1990).

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