Process for buried localized oxidation of a silicon substrate an

Details Process for buried localized oxidation of a silicon substrate an Process for buried localized oxidation of a silicon substrate an

1992-02-06

1993-07-20

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 61, 437 67, 437 70, 437 72, 437 73, 148DIG50, H01L 2176

Patent

active

052293181

ABSTRACT:
The invention relates to a process for buried localized oxidation of a silicon substrate. The process consists in performing a) a sealing on the surface of the substrate (S), by a first nitriding, by growing a later of silicon nitride forming at least one surface layer, then in performing b) the etching (G1) of a trench (T) intended to receive the buried localized oxidation. A second nitriding is performed c) on the free area of the trench (T) in order to obtain a sealing sc of the walls of the trench (T). An etching (G2) is performed at d) on the bottom wall of the trench (T) by at least partial etching of the silicon nitride layer obtained by second nitriding in order to uncover the substrate material (S). A localized oxidation e) is performed to produce the buried oxidation (OE) of the substrate in the trench. Application to the production of integrated circuits.

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V. K. Dwivedi, "A Bird's-Beak-free Sealed-Interface Local Oxidation Technology for Submicron Ultra-Large-Scale Integrated Circuits", Journal of Electrochemical Society, vol. 137, No. 8, pp. 2586-2588, Aug. 1990.
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Kuang Yi Chiu et al., "A Bird's Beak Free Local Oxidation Technology Feasible for VLSI Circuit's Fabrication", IEEE Transactions on Electron Devices, vol. ED-29, No. 4, pp. 536-540, Apr. 1982.
S. S. Lee et al., "A Novel CMOS Isolation Technology Using a Consumable Nitride Seal During Field Oxidation", Extended Abstracts, Spring Meeting Montreal, vol. 90-1, pp. 616-617, May 1990.
Russel Martin, "Spacer for Improved Local Oxidation Profile", Xerox Disclosure Journal, vol. 12, No. 5, pp. 251-253, Sep. 1987.

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