Process for borosilicate glass films for multilevel metallizatio

Details Process for borosilicate glass films for multilevel metallizatio Process for borosilicate glass films for multilevel metallizatio

1988-06-29

1990-01-02

Childs, Sadie

Coating processes

Coating by vapor, gas, or smoke

Mixture of vapors or gases utilized

427255, 437236, 437243, C23C 1630

Patent

active

048912476

ABSTRACT:
A process for forming a borosilicate glass layer on a sharply profiled surface of a semiconductor device comprising the steps of: heating the device; conveying the device through a deposition chamber at atmospheric pressure; directing silane gas, diborane gas, and oxygen into the chamber and the surface of the heated device where they react and form a borosilicate glass layer on the surface so that smooth corners are formed for the sharply profiled surface of the semiconductor device.

REFERENCES:
patent: 4369031 (1983-01-01), Goldman
patent: 4546016 (1985-10-01), Kern
patent: 4556585 (1985-12-01), Abernathy
patent: 4557950 (1985-12-01), Foster
patent: 4601781 (1986-07-01), Mercier
Winkle, "Improved Atmospheric-Pressure CVD System for Depositing Silica and Phosphosilicate Glass Thin Films", Solid State Technology, pp. 123-128, vol. 24, No. 10, Oct., 1981.

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