Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Thinning of semiconductor substrate
Patent
1997-10-08
1999-10-12
Fourson, George
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Thinning of semiconductor substrate
438977, 156247, H01L 21762
Patent
active
059666226
ABSTRACT:
A process for device fabrication is disclosed in which two substrates having different crystal lattices are bound together. In the process a layer of material that has a crystal lattice similar to the crystal lattices of the first substrate is formed on the surface of the second substrate. The thickness of the layer is about 1 nm to about 2 nm. The layer of material is then bound to the surface of the first substrate.
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Levine Barry Franklin
Pinzone Christopher James
Botos Richard J.
Fourson George
Lucent Technologies - Inc.
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