Process for anodizing surface of gate contact of controlled rect

Details Process for anodizing surface of gate contact of controlled rect Process for anodizing surface of gate contact of controlled rect

1981-04-06

1984-02-07

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Electrical device making

29571, 357 68, H01L 21283

Patent

active

044294530

ABSTRACT:
Coplanar interdigitated gate and emitter contacts are accessible at the surface of a large area wafer forming a high power, high speed controlled rectifier. A pressure contact is made to the emitter contact which is raised above the level of the gate contact. The upper surface of the gate contact is anodized to provide an insulation layer which prevents accidental shorting of the gate to the emitter contact.

REFERENCES:
patent: 4174562 (1979-11-01), Sanders et al.
patent: 4320571 (1982-03-01), Hauck

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