Process for annealing semiconductor materials

Details Process for annealing semiconductor materials Process for annealing semiconductor materials

1977-10-03

1979-01-23

Andrews, M. J.

Metal treatment

Compositions

Heat treating

H01L 21477

Patent

active

041359526

ABSTRACT:
The specification describes a process for annealing electronic material, and particularly semiconductor crystals, wherein the material is submerged in a molten solution which contains the element or elements which comprise the material as solute. The solution is maintained at a temperature near the point at which the melt is saturated with solute. However, the material being annealed is physically isolated from actual contact with the solution by a gas-porous and liquid-tight container in a manner that exposes the material only to equilibriating gases from the molten solution during the annealing process. Thus, dissociation and decomposition of a semiconductor material during annealing is prevented by these equilibriating gases while using this extremely simple, unique and novel procedure which insures that no solid (other than the material holder) or liquid makes actual contact with the semiconductor material being annealed. Such procedure eliminates both cleaning problems and precise vapor pressure control problems which are characteristic of the known prior art.

REFERENCES:
patent: 4026735 (1977-05-01), Kamath et al.

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