Process for aligning diffusion masks with respect to isolating w

Details Process for aligning diffusion masks with respect to isolating w Process for aligning diffusion masks with respect to isolating w

1980-12-04

1983-01-25

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 148175, 148187, 2041293, H01L 2122

Patent

active

043695612

ABSTRACT:
A process in which P.sup.+ impurities are implanted in a P silicon substrate at the periphery of N.sup.+ buried layers, prior to growing an N epitaxial layer. Then an upward diffusion of the P.sup.+ impurities is caused up to the surface of the wafer in order to form insulation walls insulating separate N coffers. An anodization followed with an oxidation transforms those P walls into silica walls and makes their upper surface visible.

REFERENCES:
patent: 3713908 (1973-01-01), Agusta et al.
patent: 3846192 (1974-11-01), Murrmann
patent: 3919060 (1975-11-01), Pogge et al.
patent: 3954523 (1976-05-01), Magdo et al.
patent: 3980507 (1976-09-01), Carley et al.
patent: 4016017 (1977-04-01), Aboat et al.
IBM Technical Disclosure Bulletin, vol. 20, No. 6, Nov. 1977, New York (US), C. H. Lee, "Self-Aligning Subcollector and Isolation Regions in a Semi-Conductor Transistor", pp. 2233-2234.

Affiliated with

Also associated with

Rating

Process for aligning diffusion masks with respect to isolating w does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for aligning diffusion masks with respect to isolating w, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for aligning diffusion masks with respect to isolating w will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1618377