Process for adjusting a photolithographic exposure machine and a

Details Process for adjusting a photolithographic exposure machine and a Process for adjusting a photolithographic exposure machine and a

1993-07-12

1995-08-01

Duda, Kathleen

Radiation imagery chemistry: process, composition, or product th

Including control feature responsive to a test or measurement

430311, 355 55, 355 77, 2502014, G03F 720

Patent

active

054379482

ABSTRACT:
A process and device for adjusting a photolithographic exposure machine, which is used for manufacturing integrated circuits. A guide wafer being furnished with identical test patterns, these test patterns are successively illuminated with white light beam and the coefficient of reflectivity of each test pattern is thus measured. For each location of the corresponding pattern, the law of correspondence of the coefficient of reflectivity as a function of the defocusing parameter for the illuminating beam is thus established. The optimum sharp focus value is determined by criterion of threshold of the value of the coefficient of reflectivity.

REFERENCES:
patent: 5043236 (1991-08-01), Tissier
patent: 5077464 (1991-12-01), Ebbing
patent: 5303002 (1994-04-01), Yan
Microelectronic Engineering, vol. 9, No. 104, May 1989, Huynh et al., "Calibrated Exposure and Focus Test Patterns for Characterization of Optical Projection Printing".

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