Process fo the production of Si.sub.2 N.sub.4 using a silicon, p

Details Process fo the production of Si.sub.2 N.sub.4 using a silicon, p Process fo the production of Si.sub.2 N.sub.4 using a silicon, p

1993-12-20

1994-08-23

Straub, Gary P.

Chemistry of inorganic compounds

Silicon or compound thereof

Binary compound

423324, 423406, 501 97, C01B 3300

Patent

active

053405617

ABSTRACT:
The present invention relates to a process for the production of low-needle silicon nitride of high .alpha.-content, wherein an amorphous nitrogen-containing silane compound is mixed with a crystalline or amorphous compound comprising the elements silicon, phosphorus and nitrogen to form a mixture which is heat-treated at temperatures above 1000.degree. C. to form the low-needle silicon nitride. The present invention also relates to the silicon-, nitrogen- and phosphorus-containing compound which is used as the starting material in the process for the production of the low-needle silicon nitride, and the process for the production of the silicon-, nitrogen-and phosphorus-containing compound.

REFERENCES:
patent: 4482689 (1984-11-01), Haluska
patent: 4716028 (1987-12-01), Kasai et al.
patent: 4770830 (1988-09-01), Arakawa et al.
patent: 5030434 (1991-07-01), Pitzer et al.
patent: 5248490 (1993-09-01), Krause
patent: 5258169 (1993-11-01), Wannasat et al.
"N-(chlorophosphoranylidene)sylylamines" by L. P. Filonenko and A. M. Pinchuk translated from Zhurnal Ohshchei Khimii, vol. 49, No. 2, pp. 348-352 Feb. 1979 into English by the Plenum Publishing Corporation (1979) pp. 302-305.
"Gas Phase & Computational Studies of Pentacoordinate Silicon" by Robert Damrauer et al J.A.C.S. vol. 110, No. 20, Sep. 28, 1988, pp. 6601-6606.
Abstract (from "Orbit") of EP-A-0 219 764, Apr. 1987.

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