Process flow for building MRAM structures

Details Process flow for building MRAM structures Process flow for building MRAM structures

2007-12-11

2007-12-11

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S672000, C438S692000, C257SE27006, C257SE21665

Reexamination Certificate

active

10637096

ABSTRACT:
MRAM structures employ the magnetic properties of layered magnetic and non-magnetic materials to read memory storage logic states. Improvements in switching reliability may be achieved by altering the shape of the layered magnetic stack structure. Forming recessed regions with sloped interior walls in an ILD layer prior to depositing the layered magnetic stack structure produces a significant advantage over the prior art by allowing a CMP process to be used to define the magnetic bit shapes. The sloped interior walls of the recessed regions, which is singular to the present invention, provide a unique formation and shaping of the magnetic stack structure, which may reduce the magnetic coupling effect between magnetic layers of the magnetic stack structure.

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