Process control system of semiconductor vapor phase growth appar

Details Process control system of semiconductor vapor phase growth appar Process control system of semiconductor vapor phase growth appar

1989-10-03

1993-09-14

Bueker, Richard

Coating apparatus

Program, cyclic, or time control

Having prerecorded program medium

118698, 118704, 118715, 118725, 427 8, 4272481, C23C 1600

Patent

active

052445003

ABSTRACT:
In a semiconductor vapor phase growing apparatus of the type disclosed in U.S. Pat. No. 4,430,959 dated Feb. 14, 1984, the thickness and resistivity of the semiconductor grown on a substrate by vapor phase growing technique are controlled by a sequence program. The content of the sequence program is corrected to approach a target thickness and a target resistivity at each batch operation. In a modification, an auxiliary mass flow valve is provided for each main mass flow valve and when the main mass flow valve becomes faulty, it is substituted by the auxiliary mass flow valve so as to continue the normal operation of the vapor phase growing apparatus.

REFERENCES:
patent: 4430959 (1984-02-01), Ebata
patent: 4772485 (1988-09-01), Ebata
Don Jackson, "Computer Control of Epitaxial Production Systems", Solid State Technology, Nov. 1972, pp. 35-38.

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