Process control system of semiconductor vapor phase growing appa

Details Process control system of semiconductor vapor phase growing appa Process control system of semiconductor vapor phase growing appa

1986-06-10

1988-09-20

Bueker, Richard

Coating processes

Measuring, testing, or indicating

427 9, 427 10, 4272481, C23C 1600

Patent

active

047724854

ABSTRACT:
In a semiconductor vapor phase growing apparatus of the type disclosed in U.S. Pat. No. 4,430,959 dated Feb. 14, 1984, the thickness and resistivity of the semiconductor grown on a substrate by vapor phase growing technique are controlled by a sequence program. The content of the sequence program is corrected to approach a target thickness and a target resistivity at each batch operation. In a modification, an auxiliary mass flow valve is provided for each main mass flow valve and when the main mass flow valve becomes faulty, it is substituted by the auxiliary mass flow valve so as to continue the normal operation of the vapor phase growing apparatus.

REFERENCES:
patent: 4331702 (1982-05-01), Hieber et al.
patent: 4430959 (1984-02-01), Ebata et al.

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