Process control method in spin etching and spin etching...

Details Process control method in spin etching and spin etching... Process control method in spin etching and spin etching...

2004-03-22

2010-02-09

Olsen, Allan (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C156S345150, C257SE21219

Reexamination Certificate

active

07659212

ABSTRACT:
The present invention provides a process control method in spin etching capable of realizing uniformity in etching amount in etching treatment for even wafers each having various conditions, and achieving uniformity of thickness values among etched wafers. In the present invention, weight of a wafer before etching is measured in units of 1/1000 g, followed by predetermined etching treatment in a spin etching section. Thereafter, weight of the wafer is again measured in units of 1/1000 g after rinsing and drying treatment of the wafer, and then an actual etching amount is calculated from a difference between weight before and after etching of the wafer, confirming an etching rate each time etching to thereby control an etching time.

REFERENCES:
patent: 2002/0046757 (2002-04-01), Inagaki et al.
patent: 1 172 844 (2002-01-01), None
patent: 61287124 (1986-12-01), None
patent: 01309332 (1989-12-01), None
patent: 2002086084 (2002-03-01), None

Affiliated with

Also associated with

Rating

Process control method in spin etching and spin etching... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process control method in spin etching and spin etching..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process control method in spin etching and spin etching... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4206127