Process apparatus

Coating apparatus – Gas or vapor deposition – With treating means

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20429806, C23C 1600

Patent

active

056883307

ABSTRACT:
A process apparatus whose chamber can be cleaned in a short time while not being exposed to air at all. First and second electrodes (107,105), are provided in a vacuum vessel (108). A first high-frequency power supply (112) having a first frequency is supplied to the first electrode (107), and a second high frequency power supply (101) having a second frequency different from the first frequency is provided. An impedance means and a means for connecting the second high frequency power supply to the second electrode are also provided. A means for supporting a wafer (106) is disposed on the second electrode (105), and a gas introduced into the vacuum vessel (108) is turned into a plasma by the first and second high-frequency powers. In this apparatus, a means for connecting the impedance means between the second electrode and earth during a cleaning mode of the apparatus is also provided whereby the impedance of the impedance means is made larger than the impedance between the first electrode and ground, when said impedance means is connected to said second electrode.

REFERENCES:
patent: 4464223 (1984-08-01), Gorin
patent: 5272417 (1993-12-01), Ohmi
European Search Report dated Mar. 9, 1995.

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