Cleaning and liquid contact with solids – Processes – For metallic – siliceous – or calcareous basework – including...
Reexamination Certificate
2005-04-12
2005-04-12
Kornakov, M. (Department: 1746)
Cleaning and liquid contact with solids
Processes
For metallic, siliceous, or calcareous basework, including...
C134S002000, C134S026000, C134S028000, C510S175000, C510S401000, C438S906000
Reexamination Certificate
active
06878213
ABSTRACT:
Semiconductor substrates, particularly metallized substrates such as partially processed wafers, are rinsed with an aqueous medium, preferably deionized water, which further contains an anti-corrosive chemical agent or agents selected so as to minimize corrosion of metals resulting from contact with the water. The amount of anti-corrosive chemical agent is maintained in a controlled manner at a predetermined level or within a predetermined range preferably the rinsing with aqueous medium containing anticorrosive chemical agent is also carried out for a specified time, followed by further rinsing with deionized water alone. The rinsing may be combined, either in the same vessel or in a different vessel, with a subsequent drying step, such as a drying process utilizing a drying vapor introduced into the rinse tank or into a downstream vessel. The drying vapor condenses on the surface of the semiconductor material and reduces the surface tension of residual process fluid, causing the residual process fluid to flow off the surface.
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Fahrenkrug Jane
Lindquist Paul G.
Olson Curtis R.
Rosato John J.
Kornakov M.
SCP Global Technologies Inc.
Stallman & Pollock LLP
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