Process and system for preparing a superconducting thin film of

Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k

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118665, 118708, 118712, 118715, 118725, 505819, C23C 1424

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051438968

ABSTRACT:
In a process for preparing a thin film of oxide superconductor having a layered crystal structure by depositing each layer of said layered crystal structure on a substrate by Molecular Beam Epitaxy (MBE) method with introducing oxygen-containing gas which is exited by irradiation of microwave, improvement in that a film-forming operation by the MBE method is interrupted temporally after predetermined numbers of constituent layers which correspond to one unit crystal or less than one unit crystal are layered so that the deposited constituent layers are left in an activated oxygen atmosphere to effect a crystallization promotive operation, before next film-forming operation is restarted.

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Webb et al, Appl. Phys. Lett. 51(15) Oct. 12, 1987, pp. 1191-1193.
Schlom et al, Appl. Phys. Lett. 53(17) Oct. 24, 1988, pp. 1660-1662.
Eckstein et al. J. Vac. Sci. Technol. B7(2) Mar./Apr. 1989, pp. 319-323.
Schlom et al, MRS Extended Abstracts: High-Temp Superconductors II pp. 197-200, Aug. 1, 1989.
Japanese Journal of Applied Physics, vol. 28, No. 10, Nakayama et al, "Epitaxial growth of Bi-Sr-Ca-Cu-O thin films by molecular beam epitaxy technique with shutter control," pp. 1809-1811 (Oct. 1989).
Journal of Vacuum Sci. and Tech.: Part B, vol. 7, No. 2, Eckstein et al, "Epitaxial growth of high-temperature superconducting thin films," pp. 319-323 (Mar. 1989).
Journal of Crystal Growth, vol. 95, No. 1-4, Harris et al, "MBE growth of high critical temperature superconductors," pp. 607-616 (Feb. 11, 1989).
Journal of Crystal Growth, vol. 102, No. 3, Schlom et al, "Molecular beam epitaxial growth of layered Bi-Sr-Ca-Cu-O compounds," pp. 361-375 (May 1990).

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