Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
Reexamination Certificate
2006-08-01
2006-08-01
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Tunneling through region of reduced conductivity
C349S192000, C349S054000, C349S055000
Reexamination Certificate
active
07084424
ABSTRACT:
A process for repairing defects applied in producing a liquid crystal display, wherein the liquid crystal display includes a pixel array formed by a plurality of scanning lines crossing with a plurality of data lines. The process includes steps of providing an essential repair line located on one side of the pixel array, welding a first intersection point of a defecting data line and the essential repair line and a second intersection point of a normal data line adjacent to the defecting data line and the essential repair line by a first laser to achieve electrical connection, and cutting a first breaking point and a second breaking point of the essential repair line by a second laser to achieve a broken circuit, wherein the first and second intersection points are located two sides of a line segment constructed by the first and second intersection points respectively.
REFERENCES:
patent: 5608245 (1997-03-01), Martin
patent: 6753935 (2004-06-01), Wu
Hong Hong-Jye
Hsu George
Wang Chih-Wei
Bever Patrick T.
Bever Hoffman & Harms LLP
Hannstar Display Corp.
Nelms David
Tran Long
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