Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Patent
1996-10-07
2000-05-30
Wilczewski, Mary
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
438253, 438255, 438396, 257306, 257309, H01L 218242
Patent
active
060690526
ABSTRACT:
The present invention provides a process and a structure for increasing a capacitance of a stack capacitor. The process includes steps of: a) forming a contact hole on a silicon substrate having an oxide layer, b) forming a polysilicon contact plug of a first polysilicon layer in the contact hole; c) forming a second gibbous polysilicon layer on a surface of the contact plug, and d) forming a third polysilicon layer above the gibbous polysilicon layer and a portion of the oxide layer to form the stack capacitor, wherein the gibbous polysilicon layer increases the capacitance of the stack capacitor.
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patent: 5759895 (1998-06-01), Tseng
patent: 5773342 (1998-06-01), Fukase
Wolf et al., "Chemical Vapor Deposition of Amorphous and Polycrystalline Films", Silicon Processing For the VLSI Era: Process Technology--vol. 1, pp. 182-185, 1986.
Wolf et al., "Dry Etching For VLSI Fabrication", Silicon Processing For the VLSI Era: Process Technology (vol. 1), pp. 540-541, 1986.
Mosel Vitelic Inc.
Thomas Toniae M.
Wilczewski Mary
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