Process and mask for ion beam etching of fine patterns

Electric heating – Metal heating – By arc

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219121EM, 219121EE, 219121ER, 219121LJ, 219121LP, 156643, 204192EC, 204192N, 427 35, 427 91, B23K 1500, C23F 102, C23C 1500, H01L 21302

Patent

active

042752868

ABSTRACT:
The specification describes a process for ion beam etching fine patterns in a substrate using a protected resist mask which prevents erosion of the mask. First, a resist pattern is formed on the surface of a substrate to expose pre-selected areas of the substrate. Next, a selected material is deposited on the resist mask at a predetermined controlled angle of incidence with respect to the surface of the mask to form a relatively thin protective layer on the resist mask, having edges and patterns replicated from the edges and patterns of the resist mask and a negligible amount of the selected material deposited on the exposed substrate. Then, a beam of ions at a chosen energy is directed through openings in the protected mask to the substrate to etch the pre-selected areas. During etching, the protective layer on the resist prevents erosion of the resist mask and provides improved pattern definition for the etched region. In a preferred embodiment, metal contacts to the etched regions are subsequently formed by depositing a selected metal from a directional source and then lifting off the resist and the undesired metal.

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Hatzakis et al., "Forming a Sputter-Etching Mask", IBM Tech. Disc. Bull., vol. 12, No. 11, Apr. 1970, p. 1945.
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