Process and equipment for bonding by molecular adhesion

Details Process and equipment for bonding by molecular adhesion Process and equipment for bonding by molecular adhesion

2006-02-17

2009-10-13

Olsen, Allan (Department: 1792)

Etching a substrate: processes

Adhesive or autogenous bonding of two or more...

Etching improves or promotes adherence of preforms being bonded

C156S060000, C257SE21122

Reexamination Certificate

active

07601271

ABSTRACT:
The invention relates to a process for bonding by molecular adhesion of two substrates to one another during which the surfaces of the substrates are placed in close contact and bonding occurs by propagation of a bonding front between the substrates. The invention includes, prior to bonding, a step of modifying the surface state of one or both of the surfaces of the substrates so as to regulate the propagation speed of the bonding front. The surface can be modified by locally or uniformly heating or roughening the surface(s) of the substrate(s).

REFERENCES:
patent: 4883215 (1989-11-01), Goesele et al.
patent: 5236118 (1993-08-01), Bower et al.
patent: 5503704 (1996-04-01), Bower et al.
patent: 7387944 (2008-06-01), Tong et al.
patent: 2002/0076902 (2002-06-01), Geusic
patent: 2004/0023468 (2004-02-01), Ghyselen et al.
patent: 2004/0060900 (2004-04-01), Walhauer et al.
patent: 2004/0222500 (2004-11-01), Aspar et al.
patent: 2004/0262686 (2004-12-01), Shaheen et al.
patent: 2005/0142875 (2005-06-01), Yoo
patent: 2006/0240642 (2006-10-01), Kerdiles
patent: 0 969 500 (2000-01-01), None
patent: 0 971 396 (2000-01-01), None
patent: 1 566 830 (2005-08-01), None
patent: 2 868 599 (2005-10-01), None
patent: WO 0161743 (2001-08-01), None
patent: WO 2005/096369 (2005-10-01), None
patent: WO 2006/020439 (2006-02-01), None
T. Suni et al., “Effects Of Plasma Activation On Hydrophilic Bonding Of Si And Si O2”, Journal of. Electrochemical Society, vol. 149, No. 6, pp. G348-G351 (2002).
M. Wiegand et al., “Time-Dependent Surface Properties And Wafer Bonding Of O2-Plasma Treated Silicon (100) Surfaces”, Journal of. Electrochemical Society, vol. 147, No. 7, pp. 2734-2740 (2000).
X. Zhang et al., “Low-Temperature Wafer Bonding, Optimal O2Plasma Surface Pretreatment Time”, Electrochemical and Solid-State Letters; vol. 7, No. 8, pp. G172-G174 (2004).
S. Lyer and A.J. Auberton-Herve ,“Silicon Wafer Bonding Technology For VLSI and MEMS Applications”, IEE , pp. 20-81-Chapters 2, 3 and 4), (2002).
H. Rieutord, “Dynamics Of A Bonding Front”, Physical Review Letters, PRL 94, pp. 236101-1-236101-4 (2005).
U, Gösele et al., “Wafer Bonding For Microsystems Technologies”, Sensors and Actuators, vol. 74, pp. 161-168 (1999).
R. Stengl et al., “Bubble-Free Silicon Wafer Bonding in a Non-Cleanroom Environment”, Japanese Journal Of Applied Physics, vol. 27, No. 12, pp. L2364-L2366 (1988).
R. W. Bower et al., “Low Temperature Direct Silicon Wafer Bonding Using Argon Activation”, Jpn. J. Appl. Phys. vol. 3, Part 2, No. 5A, pp. L 527-L 528 (1997).
R. W. Bower et al., Mechanical Considerations For Direct Bonding Of Semiconductor Materials, Electrochemical Society Proceedings, vol. 95-7, pp. 107-115.
S. N. Farrens et al., “A Kinetics Study of the Bond Strength of Direct Bonded Wafers”, J. Electrochemical Society, vol. 141, No. 11, pp. 3225-3230 (1994).
S. N. Farrens et al., “Chemical Free Room Temperature Wafer To Wafer Direct Bonding”, J. Electrochemical Society, vol. 142, No. 11, pp. 3949-3955 (1995).
U. Gosele et al., “History and Future of Semiconductor Wafer Bonding”, Solid State Phenomena, vol. 47-48, pp. 33-44 (1996).
U. Gosele et al., “Self-propagating room-temperature silicon wafer bonding in ultrahigh vacuum”, Appl. Phys. Lett., vol. 67,(24), pp. 3614-3615 (1995).
U. Gosele et al., “Wafer Bonding: A Flexible Approach to Materials Integration”, pp. 20-25, The Electrochemical Society Interface, Summer (2000).
C. Gui et al., “Present and Future Role of Chemical Mechanical Polishing in Wafer Bonding”, J. Electrochemical Society , vol. 145, No. 6, pp. 2198-2204 (1998).
Jan Haisma et al., XP-002264934, “Diversity and feasibility of direct bonding: a survey of a dedicated optical technology”, Applied Optics, vol. 33, No. 7, pp. 1154-1169 (1994).
Jan Haisma et al., “Surface Preparation And Phenomenological Aspects Of Direct Bonding”, Philips Journal of Research, vol. 49, No. 1/2 (1995).
J.B. Lasky, “Wafer bonding for silicon-on-insulator technologies”, Appl. Phys. Lett., vol. 48,(1), pp. 78-80 (1986).
B.H. Lee, “A Novel Pattern Transfer Process for Bonded SOI Giga-bit DRAMs”, Proceedings 1996 IEEE International SOI Conference (1996).
Y. Albert Li et al., “Low Temperature Copper to Copper Direct Bonding”, Department of Electrical and Computer Engineering, Univ. of CA, Davis, CA Fairchild Semiconductor Corp, 1322 Crossman Avenue, Sunnyvale, CA.
Y. Albert Li et al., “Systematic Low Temperature Silicon Bonding using Pressure and Temperature”, Jpn. J. Appl. Phys. Lett., vol. 37,(24), Part I, No. 3A, pp. 737-741 (1998).
Karin Ljungberg et al. , “Phenomenology of Silicon Wafer Bonding”, pp. 1-58, Comprehensive Summaries of Uppsala Dissertations from the Faculty of Science and Technology 166, Acta Universitatis Upsaliensis, Uppsala 1995.
Gertrud Kräuter et al, “Low temperature silicon direct bonding for application in micromechanics: bonding energies for different combinations of oxides”, Sensors and Actuators A, vol. 70, pp. 271-275 (1998).
W. P. Maszara, “Role of surface morphology in wafer bonding”, J. Appl. Phys., vol. 69, No. 1.1.. pp. 257-260 (1991).
W. P. Maszara, Reviews: “Silicon-On-Insulator by Wafer Bonding: A Review”, J. Electrochemical Society, vol. 138, No. 1, pp. 341-347 (1991).
Kiyoshi Mitani et al., “Causes and Prevention of Temperature-Dependent Bubbles in Silicon Wafer Bonding”, Japanese Journal Of Applied Physics, vol. 30, No. 4, pp. 615-622 (1991).
K. Mitani et al., “Formation of Interface Bubbles in Bonded Silicon Wafers: A Thermodynamic Model”, Applied Physics A, vol. 54, pp. 543-552, (1992).
Andreas. Ploöβi et al., “Covalent Silicon Bonding At Room Temperature In Ultrahigh Vacuum”, Mat. Res. Soc. Symp. Proc., vol. 483, pp. 141-146 (1998)).
M. Shimbo et al., “Silicon-to-silicon direct bonding method”, J. Appl. Phys., vol. 60,(8), pp. 2987-2989 (1986).
G.A.C.M. Spierings et al., “Surface-Related Phenomena In The Direct Bonding Of Silicon And Fused-Silica Wafer Pairs”, , Philips Journal of Research, vol. 49, No. 1/2 pp. 47-63, (1995).
R. Stengl et al, “A Model for the Silicon Wafer Bonding Process”, Japanese Journal of Applied Physics, vol. 28, No. 10, pp. 1735-1741 (1989).
G.-L Sun et al., “Cool Plasma Activated Surface In Silicon Wafer Direct Bonding Technology”, Colloque C4, supplement au n°9, Tome 49, pp. C4-79-C4-80 (1988) Microelectronics Center, Nanjing Institute of Technology, Nanjing 210018, China.
Hideki Takagi et al., “Effect of Surface Roughness on Room-Temperature Wafer Bonding by Ar Beam Surface Activation”, Jpn. J. Appl. Phys. Lett., vol. 37,, Part I, No. 7, pp. 4197-4203 (1998).
Q.-Y. Tong et al. , “A Model of Low-Temperature Wafer Bonding And Its Applications”, J. Electrochemical Society , vol. 143, No. 5, pp. 1773-1779 (1991).
Q.-Y. Tong et al., “A Simple Chemical Treatment for Preventing Thermal Bubbles in Silicon Wafer Bonding”, J. Electrochemical Society , vol. 142, No. 10, pp. L201-L203 (1995).
Q.-Y. Tong et al., XP-002453642, “Low Temperature Wafer Direct Bonding”, Journal Of Microetectromechanical Systems, vol. 3. No. 1, pp. 29-35 (1994).
Q.-Y. Tong et al., Invited Review: “Semiconductor wafer bonding: recent developments”, Materials Chemistry and Physics, vol. 37, pp. 101-127 (1994).
M. K. Weldon, “Physics and chemistry of silicon wafer bonding investigated by infrared absorption spectroscopy”, J. Vac. Sci. Technol. B 14(4), pp. 3095-3106 (1996).
C. Zhang et al., “The Effect of Al0.7Ga0.3As Etch Stop Removal on the Preparation of Wafer-Bonded Compliant Substrates”, Journal of The Electrochemical Society, 146(4), pp. 1597-1601 (199

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