Process and device for the production of a single crystal

Details Process and device for the production of a single crystal Process and device for the production of a single crystal

1998-12-04

2000-10-17

Hiteshew, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117218, 117222, 117900, C30B 3500

Patent

active

061325074

ABSTRACT:
A process and device for the production of a single crystal of semiconductor material is by pulling the single crystal from a melt, which is contained in a crucible and is heated by a side heater surrounding the crucible. The melt is additionally heated, in an annular region around the single crystal, by an annular heating device which surrounds the single crystal and is positioned above the melt.

REFERENCES:
patent: 2852420 (1958-09-01), Pohl
patent: 4597969 (1986-07-01), Jasinsski et al.
patent: 5132091 (1992-07-01), Azad
patent: 5441014 (1995-08-01), Tomioka et al.
E. Dornberger, W. von Ammon in Electrochemical Society, vol. 143, No. 5 (6).
Patent Abstracts of Japan, vol. 018, No. 244, May 10, '96, & JP 06027684 (Tokyo Oka Kogyo Co. Ltd.) , Feb. 4, 1994.
Patent Abstracts of Japan, vol. 7, No. 118, May 21, 1983, and JP 58 036998 (Toshiba Ceramics KK), Mar. 4, 1983.
Patent Abstracts of Japan, vol. 018, No. 575, Nov. 4, 1994, & JP 06211591 (Nippon Steel Corp ; others: 01) Aug. 2, 1994.

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